2008. 9. 11 1/2 semiconductor technical data SMFB13L schottky barrier type diode revision no : 6 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. reversed battery connection protection. dc/dc converter. cellular phones. maximum rating (ta=25 ) + _ + _ + _ + _ + _ + _ smf dim millimeters a b c d e f g 2.6 0.05 3.5 0.1 0.9 0.05 1.6 0.05 0.65 0.05 + _ 0.11 0.05 0 ~ 0.1 d e e f 0.98 0.05 h 1 2 c g h 1. anode 2. cathode electrical characteristics (ta=25 ) marking 13l type name lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =1.0a - - 0.36 v repetitive peak reverse current i rrm v rrm =rated - - 1.0 ma thermal resistance r th(j-1) junction to lead - - 20 /w r th(j-a) junction to ambient (on a grass-epoxy board) - - 140 characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 30 v average output rectitifed current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 22 a junction temperature t j -40 125 storage temperature range t stg -40 125
2008. 9. 11 2/2 SMFB13L revision no : 6 i f - v f f forward voltage v (v) f forward current i (a) number of cycles peak surge forward current i (a) 1 0 8 4 16 12 28 24 20 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz f(av) average forward current i (a) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 f(av) average forward power dissipation p (w) 0.2 0.6 0.4 0.8 1.0 1.2 1.6 1.4 rectangular rectangular waveform conduction angle =60 conduction angle 0 360 f(av) average forward current i (a) 0 0 20 40 100 80 60 120 140 maximum allowable temperature ta max ( c) 0.2 0.4 0.6 1.0 1.2 0.8 1.4 1.6 on a grass-epoxy board waveform 0 i f(av) v =15v r 360 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0.1 0.3 0.5 1 3 5 =60 120 dc 180 120 180 dc 25 c t =125 c j p f(av) - i f(av) ta - i f(av)
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